3DD102A transistor equivalent, silicon npn power transistor.
*Designed for power amplifier , DC Transform T-Shirt
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNI.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*DC Current Gain-
: hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
*Minimum Lot-to-Lot variations for robust device
performance .
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